PDTC143ES vs RN1201 feature comparison

PDTC143ES NXP Semiconductors

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RN1201 Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Part Package Code TO-92
Package Description PLASTIC, SC-43A, 3 PIN IN-LINE, R-PSIP-T3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 30
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3 R-PSIP-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL IN-LINE
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.5 W 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position BOTTOM SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Samacsys Manufacturer Toshiba
Collector-Base Capacitance-Max 6 pF
Operating Temperature-Max 150 °C
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

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