PDTC123ETT/R
vs
PDTC123ET
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Part Package Code
SOT-23
SOT-23
Package Description
SMALL OUTLINE, R-PDSO-G3
PLASTIC PACKAGE-3
Pin Count
3
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
8541.21.00.95
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Base Capacitance-Max
3.5 pF
3.5 pF
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
30
JEDEC-95 Code
TO-236AB
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.25 W
0.25 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
VCEsat-Max
0.3 V
0.3 V
Base Number Matches
2
3
Pbfree Code
Samacsys Manufacturer
NXP
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.25 W
Compare PDTC123ETT/R with alternatives
Compare PDTC123ET with alternatives