PDTC123EM vs DTA123JM-T2L feature comparison

PDTC123EM NXP Semiconductors

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DTA123JM-T2L ROHM Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS ROHM CO LTD
Part Package Code SC-101
Package Description CHIP CARRIER, R-PBCC-N3 SMALL OUTLINE, R-PDSO-F3
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 21
Case Connection COLLECTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 80
JESD-30 Code R-PBCC-N3 R-PDSO-F3
JESD-609 Code e3 e2
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN PNP
Power Dissipation-Max (Abs) 0.25 W 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin/Copper (Sn/Cu)
Terminal Form NO LEAD FLAT
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Transition Frequency-Nom (fT) 250 MHz

Compare PDTC123EM with alternatives

Compare DTA123JM-T2L with alternatives