PDTC123EM,315 vs PDTC123YMB feature comparison

PDTC123EM,315 NXP Semiconductors

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PDTC123YMB Nexperia

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS NEXPERIA
Part Package Code DFN
Package Description 1.0 X 0.6 MM, 0.5 MM HEIGHT, LEADLESS ULTRA SMALL, PLASTIC, SC-101, 3 PIN CHIP CARRIER, R-PBCC-N3
Pin Count 3
Manufacturer Package Code SOT883
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 4.5
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 35
JESD-30 Code R-PBCC-N3 R-PBCC-N3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Date Of Intro 2017-02-01
Reference Standard AEC-Q101; IEC-60134
Transition Frequency-Nom (fT) 230 MHz

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