PDTC114YMB
vs
DTC114YE
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NEXPERIA
TAIWAN SEMICONDUCTOR CO LTD
Package Description
CHIP CARRIER, R-PBCC-N3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
2017-02-01
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 4.7
BUILT IN BIAS RESISTANCE RATIO IS 4.7
Case Connection
COLLECTOR
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
100
68
JESD-30 Code
R-PBCC-N3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Reference Standard
AEC-Q101; IEC-60134
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
NO LEAD
GULL WING
Terminal Position
BOTTOM
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
230 MHz
250 MHz
Base Number Matches
2
14
Compare PDTC114YMB with alternatives
Compare DTC114YE with alternatives