PDTC114YET/R
vs
UNR9214J
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
PANASONIC CORP
Part Package Code
SC-75
SC-89
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-F3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 4.7
BUILT IN BIAS RESISTOR RATIO 4.76
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Base Capacitance-Max
3.5 pF
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
100
80
JESD-30 Code
R-PDSO-G3
R-PDSO-F3
JESD-609 Code
e3
e6
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
TIN BISMUTH
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
VCEsat-Max
0.3 V
Base Number Matches
2
1
Moisture Sensitivity Level
1
Transition Frequency-Nom (fT)
150 MHz
Compare PDTC114YET/R with alternatives
Compare UNR9214J with alternatives