PDTC114TET/R
vs
MUN5216DW1T2
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEXPERIA
|
ON SEMICONDUCTOR
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G6
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-02-01
|
|
| Additional Feature |
BUILT-IN BIAS RESISTOR
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
200
|
160
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G6
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
3
|
6
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
3
|
| Pin Count |
|
6
|
| Manufacturer Package Code |
|
CASE 419B-01
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare PDTC114TET/R with alternatives
Compare MUN5216DW1T2 with alternatives