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PDTB113ZT,235 vs PDTB113EK feature comparison

PDTB113ZT,235 Nexperia

Buy Now Datasheet

PDTB113EK Philips Semiconductors

Buy Now Datasheet
Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA PHILIPS SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 ,
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Collector Current-Max (IC) 0.5 A 0.5 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 33
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Surface Mount YES NO
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code No
Power Dissipation-Max (Abs) 0.25 W
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

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