PDTB113ET,215
vs
PDTB113ET
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Part Package Code
TO-236
SOT-23
Pin Count
3
3
Manufacturer Package Code
SOT23
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Date Of Intro
2017-02-01
Samacsys Manufacturer
Nexperia
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.5 A
0.5 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
33
33
JEDEC-95 Code
TO-236AB
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
PNP
PNP
Surface Mount
YES
YES
Terminal Finish
TIN
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
4
Pbfree Code
Package Description
PLASTIC PACKAGE-3
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
0.25 W
Qualification Status
Not Qualified
Compare PDTB113ET,215 with alternatives
Compare PDTB113ET with alternatives