PDTA144TM,315 vs BCR183W feature comparison

PDTA144TM,315 NXP Semiconductors

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BCR183W Siemens

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Rohs Code Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS SIEMENS A G
Part Package Code DFN
Package Description 1 X 0.60 MM, 0.50 MM HEIGHT, LEAD LESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT883
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Additional Feature BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 1
Case Connection COLLECTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 30
JESD-30 Code R-PBCC-N3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN
Terminal Form NO LEAD GULL WING
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
HTS Code 8541.21.00.75
Power Dissipation Ambient-Max 0.25 W
Transition Frequency-Nom (fT) 200 MHz
VCEsat-Max 0.3 V

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