PDTA144ETT/R vs PDTA144ET,215 feature comparison

PDTA144ETT/R Nexperia

Buy Now Datasheet

PDTA144ET,215 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 PLASTIC, SMD, SST3, 3 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 68
JEDEC-95 Code TO-263AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
Base Number Matches 2 2
Part Package Code TO-236
Pin Count 3
Manufacturer Package Code SOT23
HTS Code 8541.21.00.95
Collector-Base Capacitance-Max 5 pF
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
VCEsat-Max 0.3 V

Compare PDTA144ETT/R with alternatives

Compare PDTA144ET,215 with alternatives