PDTA124EU-T vs MUN5216DW1T1 feature comparison

PDTA124EU-T NXP Semiconductors

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MUN5216DW1T1 Rochester Electronics LLC

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS ROCHESTER ELECTRONICS LLC
Part Package Code SC-70 SC-88
Package Description SMALL OUTLINE, R-PDSO-G3 CASE 419B-02, SC-88, 6 PIN
Pin Count 3 6
Reach Compliance Code unknown unknown
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 60 160
JESD-30 Code R-PDSO-G3 R-PDSO-G6
JESD-609 Code e3 e0
Number of Elements 1 2
Number of Terminals 3 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 240
Polarity/Channel Type PNP NPN
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish Tin (Sn) TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Manufacturer Package Code CASE 419B-02
Moisture Sensitivity Level NOT SPECIFIED

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