Findchips: Compare PDTA115EEF,115 vs PDTA115TT,215

PDTA115EEF,115 vs PDTA115TT,215 feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Obsolete	Transferred
Ihs Manufacturer	NXP SEMICONDUCTORS	NXP SEMICONDUCTORS
Part Package Code	SC-89	TO-236
Package Description	SMALL OUTLINE, R-PDSO-F3	PLASTIC PACKAGE-3
Pin Count	3	3
Reach Compliance Code	unknown	compliant
ECCN Code	EAR99	EAR99
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR
Collector Current-Max (IC)	0.02 A	0.1 A
Collector-Emitter Voltage-Max	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)	80	100
JESD-30 Code	R-PDSO-F3	R-PDSO-G3
Number of Elements	1	1
Number of Terminals	3	3
Operating Temperature-Max	150 °C	150 °C
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Polarity/Channel Type	PNP	PNP
Qualification Status	Not Qualified	Not Qualified
Surface Mount	YES	YES
Terminal Form	FLAT	GULL WING
Terminal Position	DUAL	DUAL
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Base Number Matches	1	2
Rohs Code		Yes
Manufacturer Package Code		SOT23
Factory Lead Time		4 Weeks
JEDEC-95 Code		TO-236AB
JESD-609 Code		e3
Moisture Sensitivity Level		1
Peak Reflow Temperature (Cel)		260
Power Dissipation-Max (Abs)		0.25 W
Terminal Finish		TIN
Time@Peak Reflow Temperature-Max (s)		30
	Transistors » Small Signal Bipolar Transistors	Transistors » Small Signal Bipolar Transistors