PDM4M096S20D
vs
EDI8F8513B20M6C
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
IXYS CORP
|
WHITE ELECTRONIC DESIGNS CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
20 ns
|
|
| I/O Type |
COMMON
|
|
| JESD-30 Code |
R-XDIP-T32
|
|
| JESD-609 Code |
e0
|
|
| Memory Density |
4194304 bit
|
|
| Memory IC Type |
SRAM MODULE
|
|
| Memory Width |
8
|
|
| Number of Terminals |
32
|
|
| Number of Words |
524288 words
|
|
| Number of Words Code |
512000
|
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
70 °C
|
|
| Operating Temperature-Min |
|
|
| Organization |
512KX8
|
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
CERAMIC
|
|
| Package Code |
DIP
|
|
| Package Equivalence Code |
DIP32,.6
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Parallel/Serial |
PARALLEL
|
|
| Qualification Status |
Not Qualified
|
|
| Standby Current-Max |
0.04 A
|
|
| Standby Voltage-Min |
4.75 V
|
|
| Supply Current-Max |
0.38 mA
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
|
| Surface Mount |
NO
|
|
| Technology |
CMOS
|
|
| Temperature Grade |
COMMERCIAL
|
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
2
|
2
|
| Package Description |
|
,
|
|
|
|