PDM44528S10JTR
vs
KM718BV513J-12
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
PARADIGM TECHNOLOGY INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
,
|
QCCJ,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
3A991.B.2.B
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| JESD-30 Code |
S-PQCC-J52
|
S-PQCC-J52
|
| Memory Density |
589824 bit
|
589824 bit
|
| Memory IC Type |
CACHE SRAM
|
STANDARD SRAM
|
| Memory Width |
18
|
18
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
|
| Number of Terminals |
52
|
52
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
|
| Operating Temperature-Min |
|
|
| Organization |
32KX18
|
32KX18
|
| Output Characteristics |
3-STATE
|
|
| Output Enable |
YES
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
5.25 V
|
|
| Supply Voltage-Min (Vsup) |
4.75 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
BICMOS
|
| Temperature Grade |
COMMERCIAL
|
|
| Terminal Form |
J BEND
|
J BEND
|
| Terminal Position |
QUAD
|
QUAD
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
LCC
|
| Pin Count |
|
52
|
| Access Time-Max |
|
12 ns
|
| Length |
|
19.05 mm
|
| Package Code |
|
QCCJ
|
| Seated Height-Max |
|
4.52 mm
|
| Terminal Pitch |
|
1.27 mm
|
| Width |
|
19.05 mm
|
|
|
|
Compare PDM44528S10JTR with alternatives
Compare KM718BV513J-12 with alternatives