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PBRN113ET,215 vs PBRN123ET feature comparison

PBRN113ET,215 NXP Semiconductors

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PBRN123ET NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code TO-236 SOT-23
Package Description PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Pin Count 3 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.7 A 0.6 A
Collector-Emitter Voltage-Max 40 V 40 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 270 340
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.57 W 0.57 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pbfree Code Yes
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare PBRN113ET,215 with alternatives

Compare PBRN123ET with alternatives