P6SMBJ8.5C
vs
SMBJ8.5C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
HITANO ENTERPRISE CORP
TAIWAN SEMICONDUCTOR CO LTD
Package Description
SMB, 2 PIN
R-PDSO-C2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
11.5 V
11.5 V
Breakdown Voltage-Min
9.44 V
9.44 V
Breakdown Voltage-Nom
10.47 V
10.47 V
Clamping Voltage-Max
15.9 V
15.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
3 W
Reference Standard
IEC-1000-4-2, 4-4
Rep Pk Reverse Voltage-Max
8.5 V
8.5 V
Reverse Current-Max
5 µA
10 µA
Reverse Test Voltage
8.5 V
8.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
11
43
JESD-609 Code
e3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
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