P6SMBJ60CA_R1_10001
vs
SMBJ60CAHR4
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
1
1
Package Description
R-PDSO-C2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
73.7 V
Breakdown Voltage-Min
66.7 V
Breakdown Voltage-Nom
70.2 V
Clamping Voltage-Max
96.8 V
Configuration
SINGLE
Diode Element Material
SILICON
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity
BIDIRECTIONAL
Power Dissipation-Max
3 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
60 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
Terminal Position
DUAL
Compare P6SMBJ60CA_R1_10001 with alternatives
Compare SMBJ60CAHR4 with alternatives