P6SMBJ33A-AU_R2_000A1 vs P6SMB30CATR13 feature comparison

P6SMBJ33A-AU_R2_000A1 PanJit Semiconductor

Buy Now Datasheet

P6SMB30CATR13 Central Semiconductor Corp

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC CENTRAL SEMICONDUCTOR CORP
Package Description R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 42.2 V 31.5 V
Breakdown Voltage-Min 36.7 V 28.5 V
Breakdown Voltage-Nom 39.45 V 30 V
Clamping Voltage-Max 53.3 V 41.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 33 V 25.6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 3
Pbfree Code No
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

Compare P6SMBJ33A-AU_R2_000A1 with alternatives

Compare P6SMB30CATR13 with alternatives