P6SMBJ33A-AU_R1_000A1 vs P6SMB39AHM3_A/I feature comparison

P6SMBJ33A-AU_R1_000A1 PanJit Semiconductor

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P6SMB39AHM3_A/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PANJIT INTERNATIONAL INC VISHAY INTERTECHNOLOGY INC
Package Description SMB, 2 PIN SMB, 2 PIN
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 42.2 V 41 V
Breakdown Voltage-Min 36.7 V 37.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 33 V 33.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Date Of Intro 2019-02-07
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 39.05 V
Clamping Voltage-Max 53.9 V
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Reverse Current-Max 1 µA
Reverse Test Voltage 33.3 V
Terminal Finish Matte Tin (Sn)

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