P6SMBJ20-AU_R1_000A1
vs
SMBJ20A-GT3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
28.1 V
25.5 V
Breakdown Voltage-Min
22.2 V
22.2 V
Breakdown Voltage-Nom
25.15 V
Clamping Voltage-Max
35.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
20 V
20 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
2
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Compare P6SMBJ20-AU_R1_000A1 with alternatives
Compare SMBJ20A-GT3 with alternatives