P6SMBJ180T/R7 vs P6SMBJ180 feature comparison

P6SMBJ180T/R7 PanJit Semiconductor

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P6SMBJ180 SEMIKRON

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC SEMIKRON INTERNATIONAL
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 253.8 V 255 V
Breakdown Voltage-Min 198 V 209 V
Breakdown Voltage-Nom 225.9 V
Clamping Voltage-Max 322 V
Configuration SINGLE SINGLE
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -50 °C
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 180 V 180 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Base Number Matches 1 4
Pbfree Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e2
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Terminal Finish TIN SILVER
Terminal Form C BEND
Terminal Position DUAL

Compare P6SMBJ180T/R7 with alternatives

Compare P6SMBJ180 with alternatives