P6SMBJ180T/R7 vs MASMBJ160E3/TR7 feature comparison

P6SMBJ180T/R7 PanJit Semiconductor

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MASMBJ160E3/TR7 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PAN JIT INTERNATIONAL INC MICROSEMI CORP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 253.8 V 218 V
Breakdown Voltage-Min 198 V 178 V
Breakdown Voltage-Nom 225.9 V
Clamping Voltage-Max 322 V
Configuration SINGLE SINGLE
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 180 V 160 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Base Number Matches 1 1
Package Description R-PDSO-J2
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-J2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 1.38 W
Terminal Finish MATTE TIN
Terminal Form J BEND
Terminal Position DUAL

Compare P6SMBJ180T/R7 with alternatives

Compare MASMBJ160E3/TR7 with alternatives