P6SMBJ180A-T/R
vs
P4SMA30AHE3/61
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
VISHAY SEMICONDUCTORS
Part Package Code
DO-214AA
DO-214AC
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
230.4 V
31.5 V
Breakdown Voltage-Min
198 V
28.5 V
Breakdown Voltage-Nom
214.2 V
30 V
Clamping Voltage-Max
292 V
41.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
180 V
25.6 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
1
1
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Power Dissipation-Max
3.3 W
Terminal Finish
Matte Tin (Sn)
Compare P6SMBJ180A-T/R with alternatives
Compare P4SMA30AHE3/61 with alternatives