P6SMBJ160A-T3
vs
P6SMB180A-E3/52
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
WON-TOP ELECTRONICS CO LTD
VISHAY SEMICONDUCTORS
Part Package Code
DO-214AA
DO-214AA
Package Description
PLASTIC, SMB, 2 PIN
R-PDSO-C2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
197 V
189 V
Breakdown Voltage-Min
178 V
171 V
Breakdown Voltage-Nom
191.5 V
180 V
Clamping Voltage-Max
259 V
246 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Rep Pk Reverse Voltage-Max
160 V
154 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Pbfree Code
Yes
Forward Voltage-Max (VF)
3.5 V
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Reverse Current-Max
1 µA
Reverse Test Voltage
154 V
Time@Peak Reflow Temperature-Max (s)
30
Compare P6SMBJ160A-T3 with alternatives
Compare P6SMB180A-E3/52 with alternatives