P6SMBJ130-AU_R2_000A1 vs MQSMBJ90AE3TR feature comparison

P6SMBJ130-AU_R2_000A1 PanJit Semiconductor

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MQSMBJ90AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 182.5 V 111 V
Breakdown Voltage-Min 144 V 100 V
Breakdown Voltage-Nom 163.25 V 105.5 V
Clamping Voltage-Max 230 V 146 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 130 V 90 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 2
Part Package Code DO-214AA
Pin Count 2
Additional Feature TR, 7 INCH: 750
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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