P6SMBJ10CA_R1_10001
vs
SMBJ10C-GT3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
2
Package Description
R-PDSO-C2
Breakdown Voltage-Max
14.1 V
Breakdown Voltage-Min
11.1 V
Configuration
SINGLE
Diode Element Material
SILICON
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity
BIDIRECTIONAL
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
10 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Form
C BEND
Terminal Position
DUAL
Compare P6SMBJ10CA_R1_10001 with alternatives
Compare SMBJ10C-GT3 with alternatives