P6SMB91CAT3
vs
SA6.0
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Nom |
91 V
|
7.41 V
|
| Clamping Voltage-Max |
125 V
|
11.4 V
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-609 Code |
e0
|
|
| Polarity |
BIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
77.8 V
|
6 V
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
4
|
47
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
|
| Breakdown Voltage-Max |
|
8.15 V
|
| Breakdown Voltage-Min |
|
6.67 V
|
| Case Connection |
|
ISOLATED
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Forward Voltage-Max (VF) |
|
3.5 V
|
| JEDEC-95 Code |
|
DO-15
|
| JESD-30 Code |
|
O-PALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
|
500 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Power Dissipation-Max |
|
1 W
|
| Reference Standard |
|
MIL-STD-750
|
| Reverse Current-Max |
|
600 µA
|
| Reverse Test Voltage |
|
6 V
|
| Technology |
|
AVALANCHE
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|