P6SMB9.1CAHR4 vs SMBJ8.0CAHM3/H feature comparison

P6SMB9.1CAHR4 Taiwan Semiconductor

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SMBJ8.0CAHM3/H Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Package Description R-PDSO-C2 SMB, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 9.55 V 9.83 V
Breakdown Voltage-Min 8.65 V 8.89 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W
Reference Standard AEC-Q101 AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 7.78 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Breakdown Voltage-Nom 9.36 V
Clamping Voltage-Max 13.6 V
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 100 µA
Reverse Test Voltage 8 V
Time@Peak Reflow Temperature-Max (s) 30

Compare P6SMB9.1CAHR4 with alternatives

Compare SMBJ8.0CAHM3/H with alternatives