P6SMB9.1A vs P6SMB9.1AT/R13 feature comparison

P6SMB9.1A MDE Semiconductor Inc

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P6SMB9.1AT/R13 PanJit Semiconductor

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Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC PAN JIT INTERNATIONAL INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 9.55 V 9.5 V
Breakdown Voltage-Min 8.65 V 8.65 V
Breakdown Voltage-Nom 9.1 V 9.08 V
Clamping Voltage-Max 13.4 V 13.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard UL CERTIFIED MIL-STD-750
Rep Pk Reverse Voltage-Max 7.78 V 7.78 V
Reverse Current-Max 50 µA 50 µA
Reverse Test Voltage 7.78 V 7.78 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 27 1
Rohs Code Yes

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