P6SMB9.1 vs P6SMB9.1A feature comparison

P6SMB9.1 PanJit Semiconductor

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P6SMB9.1A MDE Semiconductor Inc

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC MDE SEMICONDUCTOR INC
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 10 V 9.55 V
Breakdown Voltage-Min 8.19 V 8.65 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 7.37 V 7.78 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 9 27
Breakdown Voltage-Nom 9.1 V
Clamping Voltage-Max 13.4 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 1 W
Reference Standard UL CERTIFIED
Reverse Current-Max 50 µA
Reverse Test Voltage 7.78 V

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