P6SMB82CAT3 vs SMBJP6KE82CAE3 feature comparison

P6SMB82CAT3 Motorola Semiconductor Products

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SMBJP6KE82CAE3 Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 86.1 V 86.1 V
Breakdown Voltage-Min 77.9 V 77.9 V
Breakdown Voltage-Nom 82 V
Clamping Voltage-Max 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
JEDEC-95 Code DO-214AA
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 70.1 V

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