P6SMB8.2CT/R13
vs
P6SMB8.2CT/R7
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
PAN JIT INTERNATIONAL INC
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
9.02 V
9.02 V
Breakdown Voltage-Min
7.38 V
7.38 V
Breakdown Voltage-Nom
8.2 V
8.2 V
Clamping Voltage-Max
12.5 V
12.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
MIL-STD-750
MIL-STD-750
Rep Pk Reverse Voltage-Max
6.63 V
6.63 V
Reverse Current-Max
400 µA
400 µA
Reverse Test Voltage
6.63 V
6.63 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Compare P6SMB8.2CT/R13 with alternatives
Compare P6SMB8.2CT/R7 with alternatives