P6SMB8.2CAHM4G vs SMBJ7.0CA-E3/5B feature comparison

P6SMB8.2CAHM4G Taiwan Semiconductor

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SMBJ7.0CA-E3/5B Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY SEMICONDUCTORS
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max 8.61 V 8.6 V
Breakdown Voltage-Min 7.79 V 7.78 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Reference Standard AEC-Q101 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 7.02 V 7 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code Yes
Part Package Code DO-214AA
Pin Count 2
Samacsys Manufacturer Vishay
Breakdown Voltage-Nom 8.19 V
Clamping Voltage-Max 12 V
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reverse Current-Max 400 µA
Reverse Test Voltage 7 V
Time@Peak Reflow Temperature-Max (s) 30

Compare P6SMB8.2CAHM4G with alternatives

Compare SMBJ7.0CA-E3/5B with alternatives