P6SMB8.2AHE3/5B vs SMBJP6KE8.2A feature comparison

P6SMB8.2AHE3/5B Vishay Semiconductors

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SMBJP6KE8.2A Microsemi Corporation

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-214AA DO-214AA
Package Description R-PDSO-C2 PLASTIC, SMBJ, 2 PIN
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 8.61 V 8.61 V
Breakdown Voltage-Min 7.79 V 7.79 V
Breakdown Voltage-Nom 8.2 V 8.2 V
Case Connection ISOLATED
Clamping Voltage-Max 12.1 V 12.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.38 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 7.02 V 7.02 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 2

Compare P6SMB8.2AHE3/5B with alternatives

Compare SMBJP6KE8.2A with alternatives