P6SMB75_R1_10001
vs
P6SMB75R4G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
82.5 V
82.5 V
Breakdown Voltage-Min
67.5 V
67.5 V
Breakdown Voltage-Nom
100 V
75 V
Clamping Voltage-Max
144 V
108 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
81 V
60.7 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Package Description
R-PDSO-C2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
3 W
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Compare P6SMB75_R1_10001 with alternatives
Compare P6SMB75R4G with alternatives