P6SMB75CATR13
vs
P6SMB75CAHE3/5B
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
78.8 V
78.8 V
Breakdown Voltage-Min
71.3 V
71.3 V
Breakdown Voltage-Nom
75 V
75 V
Clamping Voltage-Max
103 V
103 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
64.1 V
64.1 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
Additional Feature
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Case Connection
ISOLATED
JEDEC-95 Code
DO-214AA
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
5 W
Time@Peak Reflow Temperature-Max (s)
30
Compare P6SMB75CATR13 with alternatives
Compare P6SMB75CAHE3/5B with alternatives