P6SMB75A-T/R
vs
P6SMB75A-M3/5B
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
VISHAY SEMICONDUCTORS
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
78.8 V
78.8 V
Breakdown Voltage-Min
71.3 V
71.3 V
Breakdown Voltage-Nom
75.05 V
75.05 V
Clamping Voltage-Max
103 V
103 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
64.1 V
64.1 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
6
2
Forward Voltage-Max (VF)
3.5 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Power Dissipation-Max
5 W
Reverse Current-Max
1 µA
Reverse Test Voltage
64.1 V
Terminal Finish
Matte Tin (Sn)
Compare P6SMB75A-T/R with alternatives
Compare P6SMB75A-M3/5B with alternatives