P6SMB75A-E3/52 vs P6SMB75A-AU_R1_000A1 feature comparison

P6SMB75A-E3/52 Vishay Semiconductors

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P6SMB75A-AU_R1_000A1 PanJit Semiconductor

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY SEMICONDUCTORS PAN JIT INTERNATIONAL INC
Part Package Code DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 78.8 V 78.8 V
Breakdown Voltage-Min 71.3 V 71.3 V
Breakdown Voltage-Nom 75.05 V 75 V
Clamping Voltage-Max 103 V 103 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 64.1 V 64.1 V
Reverse Current-Max 1 µA
Reverse Test Voltage 64.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 1
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949

Compare P6SMB75A-E3/52 with alternatives

Compare P6SMB75A-AU_R1_000A1 with alternatives