P6SMB75 vs P6SMB75AHE3_A/H feature comparison

P6SMB75 WEITRON INTERNATIONAL CO., LTD.

Buy Now Datasheet

P6SMB75AHE3_A/H Vishay Intertechnologies

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer WEITRON TECHNOLOGY CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Base Number Matches 9 1
Rohs Code Yes
Package Description SMBJ, 2 PIN
Factory Lead Time 76 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 78.8 V
Breakdown Voltage-Min 71.3 V
Breakdown Voltage-Nom 75 V
Clamping Voltage-Max 103 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 64.1 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Compare P6SMB75AHE3_A/H with alternatives