P6SMB7.5AHM3/I
vs
P6SMB7.5ATR13
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2017-08-23
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
1
Pbfree Code
Breakdown Voltage-Max
7.88 V
Breakdown Voltage-Min
7.13 V
Breakdown Voltage-Nom
7.5 V
Clamping Voltage-Max
11.3 V
Configuration
SINGLE
Diode Element Material
SILICON
JESD-30 Code
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
6.4 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Form
C BEND
Terminal Position
DUAL
Compare P6SMB7.5AHM3/I with alternatives
Compare P6SMB7.5ATR13 with alternatives