P6SMB62_R1_00001 vs P6SMB62A_R2_00001 feature comparison

P6SMB62_R1_00001 PanJit Semiconductor

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P6SMB62A_R2_00001 PanJit Semiconductor

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 68.2 V 65.1 V
Breakdown Voltage-Min 55.8 V 58.9 V
Breakdown Voltage-Nom 62 V 62 V
Clamping Voltage-Max 89 V 85 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2 IEC-61000-4-2
Rep Pk Reverse Voltage-Max 50.2 V 53 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 50.2 V 53 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1

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Compare P6SMB62A_R2_00001 with alternatives