P6SMB6.8T/R13 vs P6SMB6.8-AU_R2_100A1 feature comparison

P6SMB6.8T/R13 PanJit Semiconductor

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P6SMB6.8-AU_R2_100A1 PanJit Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 7.48 V 7.48 V
Breakdown Voltage-Min 6.12 V 6.12 V
Breakdown Voltage-Nom 6.8 V 6.8 V
Clamping Voltage-Max 10.8 V 10.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-750 AEC-Q101; TS 16949
Rep Pk Reverse Voltage-Max 5.5 V 5.5 V
Reverse Current-Max 1000 µA
Reverse Test Voltage 5.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Package Description SMB, 2 PIN
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare P6SMB6.8T/R13 with alternatives

Compare P6SMB6.8-AU_R2_100A1 with alternatives