P6SMB6.8AT3G
vs
SMBJ5.0CAHE3/52
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
VISHAY SEMICONDUCTORS
|
Part Package Code |
DO-214
|
DO-214AA
|
Package Description |
R-PDSO-C2
|
R-PDSO-C2
|
Pin Count |
2
|
2
|
Manufacturer Package Code |
403A-03
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.50
|
|
Factory Lead Time |
4 Weeks
|
|
Samacsys Manufacturer |
onsemi
|
Vishay
|
Additional Feature |
HIGH RELIABILITY
|
UL RECOGNIZED, HIGH RELIABILITY
|
Breakdown Voltage-Max |
7.14 V
|
7.25 V
|
Breakdown Voltage-Min |
6.45 V
|
6.4 V
|
Breakdown Voltage-Nom |
6.8 V
|
6.7 V
|
Clamping Voltage-Max |
10.5 V
|
9.2 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AA
|
DO-214AA
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
0.55 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
UL RECOGNIZED
|
|
Rep Pk Reverse Voltage-Max |
5.8 V
|
5 V
|
Surface Mount |
YES
|
YES
|
Technology |
ZENER
|
AVALANCHE
|
Terminal Finish |
TIN
|
Matte Tin (Sn)
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
40
|
Base Number Matches |
4
|
1
|
|
|
|
Compare P6SMB6.8AT3G with alternatives
Compare SMBJ5.0CAHE3/52 with alternatives