P6SMB6.8AT3
vs
SMBJ5.0C
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
SECOS CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| Breakdown Voltage-Nom |
6.8 V
|
|
| Clamping Voltage-Max |
10.5 V
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-609 Code |
e0
|
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
5.8 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
4
|
43
|
| Package Description |
|
R-PDSO-C2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
|
| Breakdown Voltage-Max |
|
7.51 V
|
| Breakdown Voltage-Min |
|
6.14 V
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
R-PDSO-C2
|
| Non-rep Peak Rev Power Dis-Max |
|
600 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Technology |
|
AVALANCHE
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
|
|
|
Compare SMBJ5.0C with alternatives