P6SMB51C_R1_00001 vs P6SMB51CA-AU_R1_100A1 feature comparison

P6SMB51C_R1_00001 PanJit Semiconductor

Buy Now Datasheet

P6SMB51CA-AU_R1_100A1 PanJit Semiconductor

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 56.1 V 53.6 V
Breakdown Voltage-Min 45.9 V 48.5 V
Breakdown Voltage-Nom 51 V 51.05 V
Clamping Voltage-Max 73.5 V 70.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard IEC-61000-4-2 AEC-Q101; TS 16949
Rep Pk Reverse Voltage-Max 41.3 V 43.6 V
Reverse Current-Max 1 µA
Reverse Test Voltage 41.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare P6SMB51C_R1_00001 with alternatives

Compare P6SMB51CA-AU_R1_100A1 with alternatives