P6SMB51AHM3_A/I vs SZP6SMB51AT3G feature comparison

P6SMB51AHM3_A/I Vishay Intertechnologies

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SZP6SMB51AT3G onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC ON SEMICONDUCTOR
Package Description SMB, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2019-02-07
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 53.6 V
Breakdown Voltage-Min 48.5 V
Breakdown Voltage-Nom 51.05 V 51.05 V
Clamping Voltage-Max 70.1 V 70.1 V
Configuration SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 43.6 V 43.6 V
Reverse Current-Max 1 µA
Reverse Test Voltage 43.6 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Finish Matte Tin (Sn) TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 2
Pbfree Code Yes
Pin Count 2
Manufacturer Package Code 403A-03
Samacsys Manufacturer onsemi

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