P6SMB510A-H vs P6SMB510A feature comparison

P6SMB510A-H Bourns Inc

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P6SMB510A MDE Semiconductor Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer BOURNS INC MDE SEMICONDUCTOR INC
Package Description R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Bourns
Breakdown Voltage-Max 535 V 535 V
Breakdown Voltage-Min 485 V 485 V
Breakdown Voltage-Nom 510 V 510 V
Clamping Voltage-Max 698 V 698 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-5 UL CERTIFIED
Rep Pk Reverse Voltage-Max 434 V 434 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 19
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Power Dissipation-Max 1 W
Reverse Current-Max 5 µA
Reverse Test Voltage 434 V

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