P6SMB350A-E3/52 vs P6SMB350AHM3_A/I feature comparison

P6SMB350A-E3/52 Vishay Semiconductors

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P6SMB350AHM3_A/I Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS VISHAY INTERTECHNOLOGY INC
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 368 V
Breakdown Voltage-Min 333 V
Breakdown Voltage-Nom 350.5 V
Clamping Voltage-Max 482 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 300 V
Reverse Current-Max 1 µA
Reverse Test Voltage 300 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 1
Date Of Intro 2017-08-23

Compare P6SMB350A-E3/52 with alternatives

Compare P6SMB350AHM3_A/I with alternatives