P6SMB33ATR13
vs
P6SMB33A-M3/52
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
34.7 V
34.7 V
Breakdown Voltage-Min
31.4 V
31.4 V
Breakdown Voltage-Nom
33 V
33.05 V
Clamping Voltage-Max
45.7 V
45.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
28.2 V
28.2 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Package Description
SMB, 2 PIN
Factory Lead Time
10 Weeks
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AA
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
5 W
Reverse Current-Max
1 µA
Reverse Test Voltage
28.2 V
Time@Peak Reflow Temperature-Max (s)
30
Compare P6SMB33ATR13 with alternatives
Compare P6SMB33A-M3/52 with alternatives